Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RJK4006DPP-M0#T2

RJK4006DPP-M0#T2

For Reference Only

Part Number RJK4006DPP-M0#T2
PNEDA Part # RJK4006DPP-M0-T2
Description MOSFET N-CH 400V 8A TO220
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 5,634
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK4006DPP-M0#T2 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK4006DPP-M0#T2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK4006DPP-M0#T2, RJK4006DPP-M0#T2 Datasheet (Total Pages: 7, Size: 79.66 KB)
PDFRJK4006DPP-M0#T2 Datasheet Cover
RJK4006DPP-M0#T2 Datasheet Page 2 RJK4006DPP-M0#T2 Datasheet Page 3 RJK4006DPP-M0#T2 Datasheet Page 4 RJK4006DPP-M0#T2 Datasheet Page 5 RJK4006DPP-M0#T2 Datasheet Page 6 RJK4006DPP-M0#T2 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RJK4006DPP-M0#T2 Datasheet
  • where to find RJK4006DPP-M0#T2
  • Renesas Electronics America

  • Renesas Electronics America RJK4006DPP-M0#T2
  • RJK4006DPP-M0#T2 PDF Datasheet
  • RJK4006DPP-M0#T2 Stock

  • RJK4006DPP-M0#T2 Pinout
  • Datasheet RJK4006DPP-M0#T2
  • RJK4006DPP-M0#T2 Supplier

  • Renesas Electronics America Distributor
  • RJK4006DPP-M0#T2 Price
  • RJK4006DPP-M0#T2 Distributor

RJK4006DPP-M0#T2 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds620pF @ 25V
FET Feature-
Power Dissipation (Max)29W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FL
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

R8008ANX

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.03Ohm @ 4A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1080pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FM

Package / Case

TO-220-3 Full Pack

IPA60R380C6XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

380mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

3.5V @ 320µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 100V

FET Feature

-

Power Dissipation (Max)

31W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-FP

Package / Case

TO-220-3 Full Pack

MCP87090T-U/LC

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10.5mOhm @ 10V

Vgs(th) (Max) @ Id

1.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Vgs (Max)

+10V, -8V

Input Capacitance (Ciss) (Max) @ Vds

580pF @ 12.5V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PDFN (3x3)

Package / Case

8-PowerTDFN

BSP171PE6327T

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

300mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id

2V @ 460µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

460pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

IRL3705NL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

89A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

10mOhm @ 46A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

98nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3600pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 170W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

PIC16F684-I/ST

PIC16F684-I/ST

Microchip Technology

IC MCU 8BIT 3.5KB FLASH 14TSSOP

MAX15027ATB/V+T

MAX15027ATB/V+T

Maxim Integrated

IC REG LINEAR POS ADJ 1A 10TDFN

M29W800DT70N6E

M29W800DT70N6E

Micron Technology Inc.

IC FLASH 8M PARALLEL 48TSOP

ADUM1401ARWZ

ADUM1401ARWZ

Analog Devices

DGTL ISO 2.5KV GEN PURP 16SOIC

TAJA226K010RNJ

TAJA226K010RNJ

CAP TANT 22UF 10% 10V 1206

FPF2125

FPF2125

ON Semiconductor

IC LOAD SWITCH ADVANCED SOT23

MMA02040C1001FB300

MMA02040C1001FB300

Vishay Beyschlag

RES SMD 1K OHM 1% 0.4W 0204

AT24C04D-SSHM-T

AT24C04D-SSHM-T

Microchip Technology

IC EEPROM 4K I2C 1MHZ 8SOIC

2016L100/33DR

2016L100/33DR

Littelfuse

PTC RESET FUSE 33V 1.1A 2016

MBR130LSFT1G

MBR130LSFT1G

ON Semiconductor

DIODE SCHOTTKY 30V 1A SOD123L

LTC3642EMS8E-5#PBF

LTC3642EMS8E-5#PBF

Linear Technology/Analog Devices

IC REG BUCK 5V 50MA 8MSOP

7440430022

7440430022

Wurth Electronics

FIXED IND 2.2UH 2.5A 28 MOHM SMD