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RJK5012DPE-00#J3

RJK5012DPE-00#J3

For Reference Only

Part Number RJK5012DPE-00#J3
PNEDA Part # RJK5012DPE-00-J3
Description MOSFET N-CH 500V 12A LDPAK
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 8,352
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK5012DPE-00#J3 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK5012DPE-00#J3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK5012DPE-00#J3, RJK5012DPE-00#J3 Datasheet (Total Pages: 7, Size: 83.13 KB)
PDFRJK5012DPE-00#J3 Datasheet Cover
RJK5012DPE-00#J3 Datasheet Page 2 RJK5012DPE-00#J3 Datasheet Page 3 RJK5012DPE-00#J3 Datasheet Page 4 RJK5012DPE-00#J3 Datasheet Page 5 RJK5012DPE-00#J3 Datasheet Page 6 RJK5012DPE-00#J3 Datasheet Page 7

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RJK5012DPE-00#J3 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs620mOhm @ 6A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 25V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-LDPAK
Package / CaseSC-83

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