Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RJK5012DPE-00#J3

RJK5012DPE-00#J3

For Reference Only

Part Number RJK5012DPE-00#J3
PNEDA Part # RJK5012DPE-00-J3
Description MOSFET N-CH 500V 12A LDPAK
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 8,352
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK5012DPE-00#J3 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK5012DPE-00#J3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK5012DPE-00#J3, RJK5012DPE-00#J3 Datasheet (Total Pages: 7, Size: 83.13 KB)
PDFRJK5012DPE-00#J3 Datasheet Cover
RJK5012DPE-00#J3 Datasheet Page 2 RJK5012DPE-00#J3 Datasheet Page 3 RJK5012DPE-00#J3 Datasheet Page 4 RJK5012DPE-00#J3 Datasheet Page 5 RJK5012DPE-00#J3 Datasheet Page 6 RJK5012DPE-00#J3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RJK5012DPE-00#J3 Datasheet
  • where to find RJK5012DPE-00#J3
  • Renesas Electronics America

  • Renesas Electronics America RJK5012DPE-00#J3
  • RJK5012DPE-00#J3 PDF Datasheet
  • RJK5012DPE-00#J3 Stock

  • RJK5012DPE-00#J3 Pinout
  • Datasheet RJK5012DPE-00#J3
  • RJK5012DPE-00#J3 Supplier

  • Renesas Electronics America Distributor
  • RJK5012DPE-00#J3 Price
  • RJK5012DPE-00#J3 Distributor

RJK5012DPE-00#J3 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs620mOhm @ 6A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 25V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-LDPAK
Package / CaseSC-83

The Products You May Be Interested In

DMP3028LK3Q-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

25mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1241pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NTD85N02RT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

24V

Current - Continuous Drain (Id) @ 25°C

12A (Ta), 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17.7nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2050pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta), 78.1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IPC26N12NX1SA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

120V

Current - Continuous Drain (Id) @ 25°C

1A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

4V @ 244µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

Sawn on foil

Package / Case

Die

SI7230DN-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

STD7NK40ZT4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

5.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1Ohm @ 2.7A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

535pF @ 25V

FET Feature

-

Power Dissipation (Max)

70W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

IRF630NPBF

IRF630NPBF

Infineon Technologies

MOSFET N-CH 200V 9.3A TO-220AB

EEE-FK1J220P

EEE-FK1J220P

Panasonic Electronic Components

CAP ALUM 22UF 20% 63V SMD

IXGX120N60B

IXGX120N60B

IXYS

IGBT 600V 200A 660W TO247

LT1963AEST-3.3#PBF

LT1963AEST-3.3#PBF

Linear Technology/Analog Devices

IC REG LINEAR 3.3V 1.5A SOT223-3

MAX16027TP+

MAX16027TP+

Maxim Integrated

IC SUPERVISORY CIRC TRPL 20TQFN

SMBJ10A

SMBJ10A

Taiwan Semiconductor Corporation

TVS DIODE 10V 17V DO214AA

VC060318A400RP

VC060318A400RP

VARISTOR 25.5V 30A 0603

AD780ARZ

AD780ARZ

Analog Devices

IC VREF SERIES/SHUNT PROG 8SOIC

AC0603FR-0710RL

AC0603FR-0710RL

Yageo

RES SMD 10 OHM 1% 1/10W 0603

PDS760-13

PDS760-13

Diodes Incorporated

DIODE SCHOTTKY 60V 7A POWERDI5

ADG506AKR

ADG506AKR

Analog Devices

IC MULTIPLEXER 16X1 28SOIC

LM2904AQTH-13

LM2904AQTH-13

Diodes Incorporated

IC OPAMP GP 2 CIRCUIT 8TSSOP