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RJK6006DPP-E0#T2

RJK6006DPP-E0#T2

For Reference Only

Part Number RJK6006DPP-E0#T2
PNEDA Part # RJK6006DPP-E0-T2
Description MOSFET N-CH 600V 5A TO220
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 2,538
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK6006DPP-E0#T2 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK6006DPP-E0#T2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK6006DPP-E0#T2, RJK6006DPP-E0#T2 Datasheet (Total Pages: 7, Size: 80.32 KB)
PDFRJK6006DPP-E0#T2 Datasheet Cover
RJK6006DPP-E0#T2 Datasheet Page 2 RJK6006DPP-E0#T2 Datasheet Page 3 RJK6006DPP-E0#T2 Datasheet Page 4 RJK6006DPP-E0#T2 Datasheet Page 5 RJK6006DPP-E0#T2 Datasheet Page 6 RJK6006DPP-E0#T2 Datasheet Page 7

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RJK6006DPP-E0#T2 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.6Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds600pF @ 25V
FET Feature-
Power Dissipation (Max)29W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FP
Package / CaseTO-220-3 Full Pack

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