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RJK6026DPE-00#J3

RJK6026DPE-00#J3

For Reference Only

Part Number RJK6026DPE-00#J3
PNEDA Part # RJK6026DPE-00-J3
Description MOSFET N-CH 600V 5A LDPAK
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 3,330
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK6026DPE-00#J3 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK6026DPE-00#J3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK6026DPE-00#J3, RJK6026DPE-00#J3 Datasheet (Total Pages: 9, Size: 117.99 KB)
PDFRJK6026DPE-00#J3 Datasheet Cover
RJK6026DPE-00#J3 Datasheet Page 2 RJK6026DPE-00#J3 Datasheet Page 3 RJK6026DPE-00#J3 Datasheet Page 4 RJK6026DPE-00#J3 Datasheet Page 5 RJK6026DPE-00#J3 Datasheet Page 6 RJK6026DPE-00#J3 Datasheet Page 7 RJK6026DPE-00#J3 Datasheet Page 8 RJK6026DPE-00#J3 Datasheet Page 9

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RJK6026DPE-00#J3 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds440pF @ 25V
FET Feature-
Power Dissipation (Max)62.5W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-LDPAK
Package / CaseSC-83

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