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RJP65T54DPM-E0#T2

RJP65T54DPM-E0#T2

For Reference Only

Part Number RJP65T54DPM-E0#T2
PNEDA Part # RJP65T54DPM-E0-T2
Description IGBT TRENCH TO-3FP
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 8,712
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJP65T54DPM-E0#T2 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJP65T54DPM-E0#T2
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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RJP65T54DPM-E0#T2 Specifications

ManufacturerRenesas Electronics America
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)225A
Vce(on) (Max) @ Vge, Ic1.68V @ 15V, 30A
Power - Max63.5W
Switching Energy330µJ (on), 760µJ (off)
Input TypeStandard
Gate Charge72nC
Td (on/off) @ 25°C35ns/120ns
Test Condition400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3PFM, SC-93-3
Supplier Device PackageTO-3PF

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

330µJ (on), 230µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

293µJ (off)

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Gate Charge

149nC

Td (on/off) @ 25°C

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Test Condition

400V, 30A, 10Ohm, 15V

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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STMicroelectronics

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Input Type

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51nC

Td (on/off) @ 25°C

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Test Condition

250V, 20A, 1kOhm, 4.5V

Reverse Recovery Time (trr)

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Operating Temperature

175°C (TJ)

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Infineon Technologies

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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D2PAK

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ON Semiconductor

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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