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RN1101MFV,L3F

RN1101MFV,L3F

For Reference Only

Part Number RN1101MFV,L3F
PNEDA Part # RN1101MFV-L3F
Description TRANS PREBIAS NPN 50V SOT723
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 4,896
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN1101MFV Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberRN1101MFV,L3F
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
RN1101MFV, RN1101MFV Datasheet (Total Pages: 8, Size: 597.02 KB)
PDFRN1101MFV Datasheet Cover
RN1101MFV Datasheet Page 2 RN1101MFV Datasheet Page 3 RN1101MFV Datasheet Page 4 RN1101MFV Datasheet Page 5 RN1101MFV Datasheet Page 6 RN1101MFV Datasheet Page 7 RN1101MFV Datasheet Page 8

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RN1101MFV Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM

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