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RN1104T5LFT

RN1104T5LFT

For Reference Only

Part Number RN1104T5LFT
PNEDA Part # RN1104T5LFT
Description TRANS PREBIAS NPN 0.1W SSM
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 7,110
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN1104T5LFT Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberRN1104T5LFT
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
RN1104T5LFT, RN1104T5LFT Datasheet (Total Pages: 8, Size: 562.02 KB)
PDFRN1101ACT(TPL3) Datasheet Cover
RN1101ACT(TPL3) Datasheet Page 2 RN1101ACT(TPL3) Datasheet Page 3 RN1101ACT(TPL3) Datasheet Page 4 RN1101ACT(TPL3) Datasheet Page 5 RN1101ACT(TPL3) Datasheet Page 6 RN1101ACT(TPL3) Datasheet Page 7 RN1101ACT(TPL3) Datasheet Page 8

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RN1104T5LFT Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Supplier Device PackageSSM

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