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RN1106,LF(CT

RN1106,LF(CT

For Reference Only

Part Number RN1106,LF(CT
PNEDA Part # RN1106-LF-CT
Description TRANS PREBIAS NPN 50V 0.1W SSM
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 24,570
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN1106 Resources

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RN1106 Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Supplier Device PackageSSM

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Resistor - Base (R1)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Frequency - Transition

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Package / Case

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Manufacturer

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Frequency - Transition

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Nexperia

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Series

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Transistor Type

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Mounting Type

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Package / Case

SC-70, SOT-323

Supplier Device Package

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