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RN1106MFV(TL3,T)

RN1106MFV(TL3,T)

For Reference Only

Part Number RN1106MFV(TL3,T)
PNEDA Part # RN1106MFV-TL3-T
Description TRANS PREBIAS NPN 0.15W VESM
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 7,308
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN1106MFV(TL3 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberRN1106MFV(TL3,T)
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
RN1106MFV(TL3, RN1106MFV(TL3 Datasheet (Total Pages: 8, Size: 1,034.95 KB)
PDFRN1106MFV(TL3 Datasheet Cover
RN1106MFV(TL3 Datasheet Page 2 RN1106MFV(TL3 Datasheet Page 3 RN1106MFV(TL3 Datasheet Page 4 RN1106MFV(TL3 Datasheet Page 5 RN1106MFV(TL3 Datasheet Page 6 RN1106MFV(TL3 Datasheet Page 7 RN1106MFV(TL3 Datasheet Page 8

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RN1106MFV(TL3 Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM

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