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RN1110(T5L,F,T)

RN1110(T5L,F,T)

For Reference Only

Part Number RN1110(T5L,F,T)
PNEDA Part # RN1110-T5L-F-T
Description TRANS PREBIAS NPN 0.1W SSM
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 3,726
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 24 - May 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN1110(T5L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberRN1110(T5L,F,T)
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
RN1110(T5L, RN1110(T5L Datasheet (Total Pages: 6, Size: 307.13 KB)
PDFRN1110(T5L Datasheet Cover
RN1110(T5L Datasheet Page 2 RN1110(T5L Datasheet Page 3 RN1110(T5L Datasheet Page 4 RN1110(T5L Datasheet Page 5 RN1110(T5L Datasheet Page 6

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RN1110(T5L Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Supplier Device PackageSSM

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