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RN1131MFV(TL3,T)

RN1131MFV(TL3,T)

For Reference Only

Part Number RN1131MFV(TL3,T)
PNEDA Part # RN1131MFV-TL3-T
Description TRANS PREBIAS NPN 0.15W VESM
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 4,086
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 11 - May 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN1131MFV(TL3 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberRN1131MFV(TL3,T)
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased

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RN1131MFV(TL3 Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)100 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition-
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM

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