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RN1316,LF

RN1316,LF

For Reference Only

Part Number RN1316,LF
PNEDA Part # RN1316-LF
Description TRANS PREBIAS NPN 0.1W USM
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 26,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 28 - Jul 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN1316 Resources

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RN1316 Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageUSM

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