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RN1427TE85LF

RN1427TE85LF

For Reference Only

Part Number RN1427TE85LF
PNEDA Part # RN1427TE85LF
Description TRANS PREBIAS NPN 200MW SMINI
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 3,330
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN1427TE85LF Resources

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RN1427TE85LF Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)800mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce90 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 50mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition300MHz
Power - Max200mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageS-Mini

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