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RN1902T5LFT

RN1902T5LFT

For Reference Only

Part Number RN1902T5LFT
PNEDA Part # RN1902T5LFT
Description TRANS 2NPN PREBIAS 0.2W US6
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 2,844
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN1902T5LFT Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberRN1902T5LFT
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
RN1902T5LFT, RN1902T5LFT Datasheet (Total Pages: 7, Size: 460.73 KB)
PDFRN1906 Datasheet Cover
RN1906 Datasheet Page 2 RN1906 Datasheet Page 3 RN1906 Datasheet Page 4 RN1906 Datasheet Page 5 RN1906 Datasheet Page 6 RN1906 Datasheet Page 7

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RN1902T5LFT Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max200mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageUS6

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