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RN1908,LF(CT

RN1908,LF(CT

For Reference Only

Part Number RN1908,LF(CT
PNEDA Part # RN1908-LF-CT
Description NPNX2 BRT Q1BSR22KOHM Q1BER47KOH
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 8,622
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 23 - May 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN1908 Resources

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RN1908 Specifications

ManufacturerToshiba Semiconductor and Storage
Series*
Transistor Type-
Current - Collector (Ic) (Max)-
Voltage - Collector Emitter Breakdown (Max)-
Resistor - Base (R1)-
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
Frequency - Transition-
Power - Max-
Mounting Type-
Package / Case-
Supplier Device Package-

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector Cutoff (Max)

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Frequency - Transition

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Series

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Transistor Type

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10kOhms

Resistor - Emitter Base (R2)

10kOhms

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30 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

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Frequency - Transition

250MHz

Power - Max

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Manufacturer

Panasonic Electronic Components

Series

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Transistor Type

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

250mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

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Frequency - Transition

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Power - Max

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Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

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Transistor Type

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

US6

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Rohm Semiconductor

Manufacturer

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Series

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Transistor Type

2 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Resistor - Base (R1)

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Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

68 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

UMT6

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