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RN1911FETE85LF

RN1911FETE85LF

For Reference Only

Part Number RN1911FETE85LF
PNEDA Part # RN1911FETE85LF
Description TRANS 2NPN PREBIAS 0.1W ES6
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 28,188
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN1911FETE85LF Resources

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RN1911FETE85LF Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6

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