RN1961FE(TE85L,F)
For Reference Only
| Part Number | RN1961FE(TE85L,F) |
| PNEDA Part # | RN1961FE-TE85L-F |
| Description | TRANS 2NPN PREBIAS 0.1W ES6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 8,496 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 21 - May 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
RN1961FE(TE85L Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | RN1961FE(TE85L,F) |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- RN1961FE(TE85L,F) Datasheet
- where to find RN1961FE(TE85L,F)
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage RN1961FE(TE85L,F)
- RN1961FE(TE85L,F) PDF Datasheet
- RN1961FE(TE85L,F) Stock
- RN1961FE(TE85L,F) Pinout
- Datasheet RN1961FE(TE85L,F)
- RN1961FE(TE85L,F) Supplier
- Toshiba Semiconductor and Storage Distributor
- RN1961FE(TE85L,F) Price
- RN1961FE(TE85L,F) Distributor
RN1961FE(TE85L Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 250MHz |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |
The Products You May Be Interested In
|
Manufacturer Panasonic Electronic Components Series - Transistor Type 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 80MHz Power - Max 150mW Mounting Type Surface Mount Package / Case 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package SMini5-G1 |
Manufacturer Diodes Incorporated Series - Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7kOhms Resistor - Emitter Base (R2) 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 250MHz Power - Max 150mW Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SOT-563 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7kOhms Resistor - Emitter Base (R2) 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package US6 |
Manufacturer Nexperia USA Inc. Series - Transistor Type 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA Current - Collector Cutoff (Max) 1µA Frequency - Transition - Power - Max 300mW Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package 6-TSSOP |
Manufacturer Infineon Technologies Series - Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2kOhms Resistor - Emitter Base (R2) 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) - Frequency - Transition 170MHz Power - Max 250mW Mounting Type Surface Mount Package / Case 6-VSSOP, SC-88, SOT-363 Supplier Device Package PG-SOT363-6 |
