RN2110MFV,L3F
For Reference Only
| Part Number | RN2110MFV,L3F |
| PNEDA Part # | RN2110MFV-L3F |
| Description | X34 PB-F VESM TRANSISTOR PD 150M |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 7,704 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 14 - Jun 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
RN2110MFV Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | RN2110MFV,L3F |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single, Pre-Biased |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- RN2110MFV,L3F Datasheet
- where to find RN2110MFV,L3F
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage RN2110MFV,L3F
- RN2110MFV,L3F PDF Datasheet
- RN2110MFV,L3F Stock
- RN2110MFV,L3F Pinout
- Datasheet RN2110MFV,L3F
- RN2110MFV,L3F Supplier
- Toshiba Semiconductor and Storage Distributor
- RN2110MFV,L3F Price
- RN2110MFV,L3F Distributor
RN2110MFV Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | - |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Supplier Device Package | VESM |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA Current - Collector Cutoff (Max) 500nA (ICBO) Frequency - Transition 250MHz Power - Max 150mW Mounting Type Surface Mount Package / Case SOT-523 Supplier Device Package SOT-523 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 47 kOhms Resistor - Emitter Base (R2) 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA Current - Collector Cutoff (Max) 500nA Frequency - Transition - Power - Max 260mW Mounting Type Surface Mount Package / Case SOT-723 Supplier Device Package SOT-723 |
Manufacturer Rohm Semiconductor Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 220 Ohms Resistor - Emitter Base (R2) 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 47 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 200MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SMT3 |
Manufacturer Diodes Incorporated Series - Transistor Type PNP - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 47 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 250MHz Power - Max 200mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer Nexperia USA Inc. Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA Current - Collector Cutoff (Max) 1µA Frequency - Transition - Power - Max 250mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package TO-236AB |
