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RN2118MFV(TPL3)

RN2118MFV(TPL3)

For Reference Only

Part Number RN2118MFV(TPL3)
PNEDA Part # RN2118MFV-TPL3
Description TRANS PREBIAS PNP 0.15W VESM
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 3,096
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 23 - May 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN2118MFV(TPL3) Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberRN2118MFV(TPL3)
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
RN2118MFV(TPL3), RN2118MFV(TPL3) Datasheet (Total Pages: 8, Size: 214.77 KB)
PDFRN2118(T5L Datasheet Cover
RN2118(T5L Datasheet Page 2 RN2118(T5L Datasheet Page 3 RN2118(T5L Datasheet Page 4 RN2118(T5L Datasheet Page 5 RN2118(T5L Datasheet Page 6 RN2118(T5L Datasheet Page 7 RN2118(T5L Datasheet Page 8

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RN2118MFV(TPL3) Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM

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