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RN2312(TE85L,F)

RN2312(TE85L,F)

For Reference Only

Part Number RN2312(TE85L,F)
PNEDA Part # RN2312-TE85L-F
Description TRANS PREBIAS PNP 0.1W USM
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 27,600
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN2312(TE85L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberRN2312(TE85L,F)
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased

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RN2312(TE85L Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)22 kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition200MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageUSM

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