RN4901FE,LF(CT
For Reference Only
| Part Number | RN4901FE,LF(CT |
| PNEDA Part # | RN4901FE-LF-CT |
| Description | PNP + NPN BRT Q1BSR4.7KOHM Q1BER |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 7,200 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 4 - May 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RN4901FE Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | RN4901FE,LF(CT |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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RN4901FE Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | * |
| Transistor Type | - |
| Current - Collector (Ic) (Max) | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Resistor - Base (R1) | - |
| Resistor - Emitter Base (R2) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| Frequency - Transition | - |
| Power - Max | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer Diodes Incorporated Series - Transistor Type 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2kOhms Resistor - Emitter Base (R2) 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 250MHz Power - Max 200mW Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SOT-363 |
Manufacturer Nexperia USA Inc. Series - Transistor Type 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V, 40V Resistor - Base (R1) 22kOhms Resistor - Emitter Base (R2) 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V / 120 @ 1mA, 6V Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA Current - Collector Cutoff (Max) 1µA Frequency - Transition 100MHz Power - Max 300mW Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package 6-TSSOP |
