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RN4989FE,LF(CT

RN4989FE,LF(CT

For Reference Only

Part Number RN4989FE,LF(CT
PNEDA Part # RN4989FE-LF-CT
Description NPN + PNP BRT Q1BSR47KOHM Q1BER2
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 6,390
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RN4989FE Resources

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RN4989FE Specifications

ManufacturerToshiba Semiconductor and Storage
Series*
Transistor Type-
Current - Collector (Ic) (Max)-
Voltage - Collector Emitter Breakdown (Max)-
Resistor - Base (R1)-
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
Frequency - Transition-
Power - Max-
Mounting Type-
Package / Case-
Supplier Device Package-

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Series

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Transistor Type

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

50V, 40V

Resistor - Base (R1)

47kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 5V / 150 @ 100mA, 2V

Vce Saturation (Max) @ Ib, Ic

150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

300MHz

Power - Max

300mW

Mounting Type

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Supplier Device Package

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Manufacturer

NXP USA Inc.

Series

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Transistor Type

1 NPN Pre-Biased, 1 PNP

Current - Collector (Ic) (Max)

100mA, 500mA

Voltage - Collector Emitter Breakdown (Max)

50V, 40V

Resistor - Base (R1)

22kOhms

Resistor - Emitter Base (R2)

22kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 5mA, 5V / 150 @ 100mA, 2V

Vce Saturation (Max) @ Ib, Ic

150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

1µA

Frequency - Transition

300MHz

Power - Max

300mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-666

RN4981,LF(CT

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7kOhms

Resistor - Emitter Base (R2)

4.7kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100µA (ICBO)

Frequency - Transition

250MHz, 200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

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Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

187mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88/SC70-6/SOT-363

UP0421600L

Panasonic Electronic Components

Manufacturer

Panasonic Electronic Components

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

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Current - Collector Cutoff (Max)

500nA

Frequency - Transition

150MHz

Power - Max

125mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SSMINI6-F1

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