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RQ3E180BNTB

RQ3E180BNTB

For Reference Only

Part Number RQ3E180BNTB
PNEDA Part # RQ3E180BNTB
Description MOSFET N-CHANNEL 30V 39A 8HSMT
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 3,654
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RQ3E180BNTB Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRQ3E180BNTB
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RQ3E180BNTB, RQ3E180BNTB Datasheet (Total Pages: 12, Size: 2,625.03 KB)
PDFRQ3E180BNTB Datasheet Cover
RQ3E180BNTB Datasheet Page 2 RQ3E180BNTB Datasheet Page 3 RQ3E180BNTB Datasheet Page 4 RQ3E180BNTB Datasheet Page 5 RQ3E180BNTB Datasheet Page 6 RQ3E180BNTB Datasheet Page 7 RQ3E180BNTB Datasheet Page 8 RQ3E180BNTB Datasheet Page 9 RQ3E180BNTB Datasheet Page 10 RQ3E180BNTB Datasheet Page 11

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RQ3E180BNTB Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.9mOhm @ 18A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs37nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3500pF @ 15V
FET Feature-
Power Dissipation (Max)2W (Ta), 20W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HSMT (3.2x3)
Package / Case8-PowerVDFN

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