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RQ3G100GNTB

RQ3G100GNTB

For Reference Only

Part Number RQ3G100GNTB
PNEDA Part # RQ3G100GNTB
Description MOSFET N-CH 40V 10A TSMT
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 2,100
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RQ3G100GNTB Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRQ3G100GNTB
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RQ3G100GNTB, RQ3G100GNTB Datasheet (Total Pages: 13, Size: 2,603.64 KB)
PDFRQ3G100GNTB Datasheet Cover
RQ3G100GNTB Datasheet Page 2 RQ3G100GNTB Datasheet Page 3 RQ3G100GNTB Datasheet Page 4 RQ3G100GNTB Datasheet Page 5 RQ3G100GNTB Datasheet Page 6 RQ3G100GNTB Datasheet Page 7 RQ3G100GNTB Datasheet Page 8 RQ3G100GNTB Datasheet Page 9 RQ3G100GNTB Datasheet Page 10 RQ3G100GNTB Datasheet Page 11

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RQ3G100GNTB Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs14.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs8.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds615pF @ 20V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HSMT (3.2x3)
Package / Case8-PowerVDFN

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