Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RQ3G100GNTB

RQ3G100GNTB

For Reference Only

Part Number RQ3G100GNTB
PNEDA Part # RQ3G100GNTB
Description MOSFET N-CH 40V 10A TSMT
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 2,100
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RQ3G100GNTB Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRQ3G100GNTB
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RQ3G100GNTB, RQ3G100GNTB Datasheet (Total Pages: 13, Size: 2,603.64 KB)
PDFRQ3G100GNTB Datasheet Cover
RQ3G100GNTB Datasheet Page 2 RQ3G100GNTB Datasheet Page 3 RQ3G100GNTB Datasheet Page 4 RQ3G100GNTB Datasheet Page 5 RQ3G100GNTB Datasheet Page 6 RQ3G100GNTB Datasheet Page 7 RQ3G100GNTB Datasheet Page 8 RQ3G100GNTB Datasheet Page 9 RQ3G100GNTB Datasheet Page 10 RQ3G100GNTB Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RQ3G100GNTB Datasheet
  • where to find RQ3G100GNTB
  • Rohm Semiconductor

  • Rohm Semiconductor RQ3G100GNTB
  • RQ3G100GNTB PDF Datasheet
  • RQ3G100GNTB Stock

  • RQ3G100GNTB Pinout
  • Datasheet RQ3G100GNTB
  • RQ3G100GNTB Supplier

  • Rohm Semiconductor Distributor
  • RQ3G100GNTB Price
  • RQ3G100GNTB Distributor

RQ3G100GNTB Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs14.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs8.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds615pF @ 20V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HSMT (3.2x3)
Package / Case8-PowerVDFN

The Products You May Be Interested In

IRFB4620PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

72.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1710pF @ 50V

FET Feature

-

Power Dissipation (Max)

144W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

SI1013R-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

350mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 350mA, 4.5V

Vgs(th) (Max) @ Id

450mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

1.5nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75A

Package / Case

SC-75A

BSC048N025S G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

19A (Ta), 89A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 35µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2670pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 63W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-1

Package / Case

8-PowerTDFN

FDMS86200

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

9.6A (Ta), 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

18mOhm @ 9.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2715pF @ 75V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerTDFN

NTP095N65S3HF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

PI5USB2544ZHEX

PI5USB2544ZHEX

Diodes Incorporated

IC USB CNTRL DETECT SWTCH 16TQFN

ABM8-26.000MHZ-10-1-U-T

ABM8-26.000MHZ-10-1-U-T

Abracon

CRYSTAL 26.0000MHZ 10PF SMD

MADL-011021-14150T

MADL-011021-14150T

M/A-Com Technology Solutions

RF DIODE PIN 6TDFN

MMBT2907

MMBT2907

ON Semiconductor

TRANS PNP 40V 0.8A SOT-23

HX2019NLT

HX2019NLT

Pulse Electronics Network

XFRMR MAGNT MOD 1PORT POE 10/100

ACPL-247-500E

ACPL-247-500E

Broadcom

OPTOISO 3KV 4CH TRANS 16SOIC

ABM8-166-114.285MHZ-T2

ABM8-166-114.285MHZ-T2

Abracon

CRYSTAL 114.2850MHZ 18PF SMD

BLM31PG500SN1L

BLM31PG500SN1L

Murata

FERRITE BEAD 50 OHM 1206 1LN

ADP5054ACPZ-R7

ADP5054ACPZ-R7

Analog Devices

IC REG CTRLR BUCK 48LFCSP

MX25V1635FZNI

MX25V1635FZNI

Macronix

IC FLASH 16M SPI 80MHZ 8WSON

ADG5419BRMZ

ADG5419BRMZ

Analog Devices

IC SWITCH SINGLE SPDT 8MSOP

MAMK2520T2R2M

MAMK2520T2R2M

Taiyo Yuden

FIXED IND 2.2UH 1.9A 117 MOHM