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RQK0607AQDQS#H1

RQK0607AQDQS#H1

For Reference Only

Part Number RQK0607AQDQS#H1
PNEDA Part # RQK0607AQDQS-H1
Description MOSFET N-CH
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 2,124
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RQK0607AQDQS#H1 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRQK0607AQDQS#H1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RQK0607AQDQS#H1, RQK0607AQDQS#H1 Datasheet (Total Pages: 10, Size: 134.1 KB)
PDFRQK0607AQDQS#H1 Datasheet Cover
RQK0607AQDQS#H1 Datasheet Page 2 RQK0607AQDQS#H1 Datasheet Page 3 RQK0607AQDQS#H1 Datasheet Page 4 RQK0607AQDQS#H1 Datasheet Page 5 RQK0607AQDQS#H1 Datasheet Page 6 RQK0607AQDQS#H1 Datasheet Page 7 RQK0607AQDQS#H1 Datasheet Page 8 RQK0607AQDQS#H1 Datasheet Page 9 RQK0607AQDQS#H1 Datasheet Page 10

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RQK0607AQDQS#H1 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs270mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs2nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds170pF @ 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageUPAK
Package / CaseTO-243AA

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