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RRH090P03TB1

RRH090P03TB1

For Reference Only

Part Number RRH090P03TB1
PNEDA Part # RRH090P03TB1
Description MOSFET P-CH 30V 9A 8SOIC
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 8,586
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 23 - Jun 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RRH090P03TB1 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRRH090P03TB1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RRH090P03TB1, RRH090P03TB1 Datasheet (Total Pages: 12, Size: 5,537.27 KB)
PDFRRH090P03TB1 Datasheet Cover
RRH090P03TB1 Datasheet Page 2 RRH090P03TB1 Datasheet Page 3 RRH090P03TB1 Datasheet Page 4 RRH090P03TB1 Datasheet Page 5 RRH090P03TB1 Datasheet Page 6 RRH090P03TB1 Datasheet Page 7 RRH090P03TB1 Datasheet Page 8 RRH090P03TB1 Datasheet Page 9 RRH090P03TB1 Datasheet Page 10 RRH090P03TB1 Datasheet Page 11

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RRH090P03TB1 Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs15.4mOhm @ 9A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs30nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3000pF @ 10V
FET Feature-
Power Dissipation (Max)650mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package / Case8-SOIC (0.154", 3.90mm Width)

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