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RRH100P03GZETB

RRH100P03GZETB

For Reference Only

Part Number RRH100P03GZETB
PNEDA Part # RRH100P03GZETB
Description MOSFET P-CH 30V 10A SOP8
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 26,346
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 7 - Jul 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RRH100P03GZETB Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRRH100P03GZETB
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RRH100P03GZETB, RRH100P03GZETB Datasheet (Total Pages: 14, Size: 2,178.74 KB)
PDFRRH100P03TB1 Datasheet Cover
RRH100P03TB1 Datasheet Page 2 RRH100P03TB1 Datasheet Page 3 RRH100P03TB1 Datasheet Page 4 RRH100P03TB1 Datasheet Page 5 RRH100P03TB1 Datasheet Page 6 RRH100P03TB1 Datasheet Page 7 RRH100P03TB1 Datasheet Page 8 RRH100P03TB1 Datasheet Page 9 RRH100P03TB1 Datasheet Page 10 RRH100P03TB1 Datasheet Page 11

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RRH100P03GZETB Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs12.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs68nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3600pF @ 10V
FET Feature-
Power Dissipation (Max)650mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package / Case8-SOIC (0.154", 3.90mm Width)

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