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RS1E200BNTB

RS1E200BNTB

For Reference Only

Part Number RS1E200BNTB
PNEDA Part # RS1E200BNTB
Description MOSFET N-CH 30V 20A 8HSOP
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 5,940
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RS1E200BNTB Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRS1E200BNTB
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RS1E200BNTB, RS1E200BNTB Datasheet (Total Pages: 13, Size: 2,654.91 KB)
PDFRS1E200BNTB Datasheet Cover
RS1E200BNTB Datasheet Page 2 RS1E200BNTB Datasheet Page 3 RS1E200BNTB Datasheet Page 4 RS1E200BNTB Datasheet Page 5 RS1E200BNTB Datasheet Page 6 RS1E200BNTB Datasheet Page 7 RS1E200BNTB Datasheet Page 8 RS1E200BNTB Datasheet Page 9 RS1E200BNTB Datasheet Page 10 RS1E200BNTB Datasheet Page 11

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RS1E200BNTB Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs59nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3100pF @ 15V
FET Feature-
Power Dissipation (Max)3W (Ta), 25W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HSOP
Package / Case8-PowerTDFN

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