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RS1E350BNTB

RS1E350BNTB

For Reference Only

Part Number RS1E350BNTB
PNEDA Part # RS1E350BNTB
Description MOSFET N-CH 30V 35A 8HSOP
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 6,210
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RS1E350BNTB Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRS1E350BNTB
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RS1E350BNTB, RS1E350BNTB Datasheet (Total Pages: 13, Size: 2,662.29 KB)
PDFRS1E350BNTB Datasheet Cover
RS1E350BNTB Datasheet Page 2 RS1E350BNTB Datasheet Page 3 RS1E350BNTB Datasheet Page 4 RS1E350BNTB Datasheet Page 5 RS1E350BNTB Datasheet Page 6 RS1E350BNTB Datasheet Page 7 RS1E350BNTB Datasheet Page 8 RS1E350BNTB Datasheet Page 9 RS1E350BNTB Datasheet Page 10 RS1E350BNTB Datasheet Page 11

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RS1E350BNTB Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 35A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs185nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7900pF @ 15V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HSOP
Package / Case8-PowerTDFN

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