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RS1KHE3_A/H

RS1KHE3_A/H

For Reference Only

Part Number RS1KHE3_A/H
PNEDA Part # RS1KHE3_A-H
Description DIODE GEN PURP 800V 1A DO214AC
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 8,478
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RS1KHE3_A/H Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberRS1KHE3_A/H
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
RS1KHE3_A/H, RS1KHE3_A/H Datasheet (Total Pages: 4, Size: 84.23 KB)
PDFRS1KHE3/61T Datasheet Cover
RS1KHE3/61T Datasheet Page 2 RS1KHE3/61T Datasheet Page 3 RS1KHE3/61T Datasheet Page 4

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RS1KHE3_A/H Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)800V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.3V @ 1A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)500ns
Current - Reverse Leakage @ Vr5µA @ 800V
Capacitance @ Vr, F7pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 150°C

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Voltage - DC Reverse (Vr) (Max)

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Current - Average Rectified (Io)

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Capacitance @ Vr, F

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Voltage - DC Reverse (Vr) (Max)

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Current - Average Rectified (Io)

3.5A

Voltage - Forward (Vf) (Max) @ If

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Speed

Fast Recovery =< 500ns, > 200mA (Io)

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Current - Reverse Leakage @ Vr

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1200V

Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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