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RT1E040RPTR

RT1E040RPTR

For Reference Only

Part Number RT1E040RPTR
PNEDA Part # RT1E040RPTR
Description MOSFET P-CH 30V 4A TSST8
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 4,824
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 23 - May 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RT1E040RPTR Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRT1E040RPTR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RT1E040RPTR, RT1E040RPTR Datasheet (Total Pages: 12, Size: 625.94 KB)
PDFRT1E040RPTR Datasheet Cover
RT1E040RPTR Datasheet Page 2 RT1E040RPTR Datasheet Page 3 RT1E040RPTR Datasheet Page 4 RT1E040RPTR Datasheet Page 5 RT1E040RPTR Datasheet Page 6 RT1E040RPTR Datasheet Page 7 RT1E040RPTR Datasheet Page 8 RT1E040RPTR Datasheet Page 9 RT1E040RPTR Datasheet Page 10 RT1E040RPTR Datasheet Page 11

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RT1E040RPTR Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs45mOhm @ 4A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 10V
FET Feature-
Power Dissipation (Max)550mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSST
Package / Case8-SMD, Flat Lead

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