Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RW1C026ZPT2CR

RW1C026ZPT2CR

For Reference Only

Part Number RW1C026ZPT2CR
PNEDA Part # RW1C026ZPT2CR
Description MOSFET P-CH 20V 2.5A WEMT6
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 5,328
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RW1C026ZPT2CR Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRW1C026ZPT2CR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RW1C026ZPT2CR, RW1C026ZPT2CR Datasheet (Total Pages: 12, Size: 2,784.08 KB)
PDFRW1C026ZPT2CR Datasheet Cover
RW1C026ZPT2CR Datasheet Page 2 RW1C026ZPT2CR Datasheet Page 3 RW1C026ZPT2CR Datasheet Page 4 RW1C026ZPT2CR Datasheet Page 5 RW1C026ZPT2CR Datasheet Page 6 RW1C026ZPT2CR Datasheet Page 7 RW1C026ZPT2CR Datasheet Page 8 RW1C026ZPT2CR Datasheet Page 9 RW1C026ZPT2CR Datasheet Page 10 RW1C026ZPT2CR Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RW1C026ZPT2CR Datasheet
  • where to find RW1C026ZPT2CR
  • Rohm Semiconductor

  • Rohm Semiconductor RW1C026ZPT2CR
  • RW1C026ZPT2CR PDF Datasheet
  • RW1C026ZPT2CR Stock

  • RW1C026ZPT2CR Pinout
  • Datasheet RW1C026ZPT2CR
  • RW1C026ZPT2CR Supplier

  • Rohm Semiconductor Distributor
  • RW1C026ZPT2CR Price
  • RW1C026ZPT2CR Distributor

RW1C026ZPT2CR Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs70mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds1250pF @ 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WEMT
Package / CaseSOT-563, SOT-666

The Products You May Be Interested In

SPB70N10L

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 2mA

Gate Charge (Qg) (Max) @ Vgs

240nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4540pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXFK44N50P

IXYS

Manufacturer

IXYS

Series

HiPerFET™, PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

44A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

140mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

98nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

5440pF @ 25V

FET Feature

-

Power Dissipation (Max)

658W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264AA (IXFK)

Package / Case

TO-264-3, TO-264AA

SI3456BDV-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

35mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

AOT10N60L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

FDB0190N807L

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

270A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 34A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

249nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

19110pF @ 40V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263-7

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)

Recently Sold

KSZ8081RNBCA-TR

KSZ8081RNBCA-TR

Microchip Technology

IC TRANSCEIVER FULL 1/1 32QFN

TMMDB3

TMMDB3

STMicroelectronics

DIAC 28-36V 2A MINIMELF

74HC573D

74HC573D

Toshiba Semiconductor and Storage

IC LATCH OCTAL D 3ST 20SOIC

AT24C04D-SSHM-T

AT24C04D-SSHM-T

Microchip Technology

IC EEPROM 4K I2C 1MHZ 8SOIC

ATXMEGA64A3U-AU

ATXMEGA64A3U-AU

Microchip Technology

IC MCU 8/16BIT 64KB FLASH 64TQFP

MAX3087EESA+

MAX3087EESA+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 8SOIC

MAX3076EESD+

MAX3076EESD+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC

PIC16F18323-I/SL

PIC16F18323-I/SL

Microchip Technology

IC MCU 8BIT 3.5KB FLASH 14SOIC

SI3420A-TP

SI3420A-TP

Micro Commercial Co

MOSFET N-CH 20V 6A SOT-23

LTC3642EMS8E-5#PBF

LTC3642EMS8E-5#PBF

Linear Technology/Analog Devices

IC REG BUCK 5V 50MA 8MSOP

TCMT4100

TCMT4100

Vishay Semiconductor Opto Division

OPTOISO 3.75KV 4CH TRANS 16-SOP

MAX1037EKA+T

MAX1037EKA+T

Maxim Integrated

IC ADC 8BIT SAR SOT23-8