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RW1C026ZPT2CR

RW1C026ZPT2CR

For Reference Only

Part Number RW1C026ZPT2CR
PNEDA Part # RW1C026ZPT2CR
Description MOSFET P-CH 20V 2.5A WEMT6
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 5,328
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RW1C026ZPT2CR Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRW1C026ZPT2CR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RW1C026ZPT2CR, RW1C026ZPT2CR Datasheet (Total Pages: 12, Size: 2,784.08 KB)
PDFRW1C026ZPT2CR Datasheet Cover
RW1C026ZPT2CR Datasheet Page 2 RW1C026ZPT2CR Datasheet Page 3 RW1C026ZPT2CR Datasheet Page 4 RW1C026ZPT2CR Datasheet Page 5 RW1C026ZPT2CR Datasheet Page 6 RW1C026ZPT2CR Datasheet Page 7 RW1C026ZPT2CR Datasheet Page 8 RW1C026ZPT2CR Datasheet Page 9 RW1C026ZPT2CR Datasheet Page 10 RW1C026ZPT2CR Datasheet Page 11

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RW1C026ZPT2CR Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs70mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds1250pF @ 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WEMT
Package / CaseSOT-563, SOT-666

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