S10CM-M3/I
For Reference Only
| Part Number | S10CM-M3/I |
| PNEDA Part # | S10CM-M3-I |
| Description | DIODE GEN PURP 1KV 10A DO214AB |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 7,974 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 3 - May 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S10CM-M3/I Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | S10CM-M3/I |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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S10CM-M3/I Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 10A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 5µs |
| Current - Reverse Leakage @ Vr | 10µA @ 1000V |
| Capacitance @ Vr, F | 79pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AB, SMC |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 3A (DC) Voltage - Forward (Vf) (Max) @ If 2.3V @ 3A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 15µA @ 600V Capacitance @ Vr, F 60pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package PG-TO220-2-2 Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 60A Voltage - Forward (Vf) (Max) @ If 1.3V @ 188A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10mA @ 200V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AB, DO-5, Stud Supplier Device Package DO-203AB Operating Temperature - Junction -65°C ~ 200°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1600V Current - Average Rectified (Io) 400A Voltage - Forward (Vf) (Max) @ If - Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 15mA @ 1600V Capacitance @ Vr, F - Mounting Type Stud Mount Package / Case DO-205AB, DO-9, Stud Supplier Device Package DO-205AB, DO-9 Operating Temperature - Junction -40°C ~ 190°C |
