S10CMHM3/I
For Reference Only
| Part Number | S10CMHM3/I |
| PNEDA Part # | S10CMHM3-I |
| Description | DIODE GEN PURP 1KV 10A DO214AB |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 6,642 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 11 - May 16 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S10CMHM3/I Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | S10CMHM3/I |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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S10CMHM3/I Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | Automotive, AEC-Q101 |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 10A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 5µs |
| Current - Reverse Leakage @ Vr | 10µA @ 1000V |
| Capacitance @ Vr, F | 79pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AB, SMC |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Microsemi Corporation Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 600mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 60V Capacitance @ Vr, F 55pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-216AA Supplier Device Package Powermite 1 (DO216-AA) Operating Temperature - Junction -55°C ~ 125°C |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 90V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 750mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 90V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-214AA, SMB Supplier Device Package SMB Operating Temperature - Junction -65°C ~ 175°C |
