S150JR
For Reference Only
| Part Number | S150JR |
| PNEDA Part # | S150JR |
| Description | DIODE GEN PURP 600V 150A DO205AA |
| Manufacturer | GeneSiC Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,950 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 30 - May 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S150JR Resources
| Brand | GeneSiC Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S150JR |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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S150JR Specifications
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| Diode Type | Standard, Reverse Polarity |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 150A |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 150A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 10µA @ 600V |
| Capacitance @ Vr, F | - |
| Mounting Type | Chassis, Stud Mount |
| Package / Case | DO-205AA, DO-8, Stud |
| Supplier Device Package | DO-205AA (DO-8) |
| Operating Temperature - Junction | -65°C ~ 200°C |
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Manufacturer Micro Commercial Co Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 200mA (DC) Voltage - Forward (Vf) (Max) @ If 1V @ 200mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) 5ns Current - Reverse Leakage @ Vr 500nA @ 25V Capacitance @ Vr, F 7pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case SOD-123 Supplier Device Package SOD-123 Operating Temperature - Junction -55°C ~ 125°C |
Manufacturer Central Semiconductor Corp Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 1.2V @ 3A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 5µA @ 1200V Capacitance @ Vr, F 30pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-201AD, Axial Supplier Device Package DO-201AD Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 500mV @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 40V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case DO-201AD, Axial Supplier Device Package DO-201AD Operating Temperature - Junction -65°C ~ 150°C |
