S1JL MTG
For Reference Only
| Part Number | S1JL MTG |
| PNEDA Part # | S1JL-MTG |
| Description | DIODE GEN PURP 600V 1A SUB SMA |
| Manufacturer | Taiwan Semiconductor Corporation |
| Unit Price | Request a Quote |
| In Stock | 5,040 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 31 - Jun 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S1JL MTG Resources
| Brand | Taiwan Semiconductor Corporation |
| ECAD Module |
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| Mfr. Part Number | S1JL MTG |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
Payment Method
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- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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S1JL MTG Specifications
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.8µs |
| Current - Reverse Leakage @ Vr | 5µA @ 600V |
| Capacitance @ Vr, F | 9pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-219AB |
| Supplier Device Package | Sub SMA |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 6A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 6A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 200µA @ 600V Capacitance @ Vr, F 300pF @ 0V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package PG-TO220-2-2 Operating Temperature - Junction -55°C ~ 175°C |
