S27KS0641DPBHV023
For Reference Only
| Part Number | S27KS0641DPBHV023 |
| PNEDA Part # | S27KS0641DPBHV023 |
| Description | IC DRAM 64M PARALLEL 24BGA |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,490 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 17 - May 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S27KS0641DPBHV023 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S27KS0641DPBHV023 |
| Category | Semiconductors › Memory ICs › Memory |
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S27KS0641DPBHV023 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | HyperRAM™ KS |
| Memory Type | Volatile |
| Memory Format | PSRAM |
| Technology | PSRAM (Pseudo SRAM) |
| Memory Size | 64Mb (8M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 166MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 40ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 24-VBGA |
| Supplier Device Package | 24-FBGA (6x8) |
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Manufacturer Microchip Technology Series - Memory Type Non-Volatile Memory Format EEPROM Technology EEPROM Memory Size 16Kb (2K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 200µs Access Time 150ns Voltage - Supply 4.5V ~ 5.5V Operating Temperature 0°C ~ 70°C (TC) Mounting Type Surface Mount Package / Case 32-LCC (J-Lead) Supplier Device Package 32-PLCC (13.97x11.43) |
Manufacturer Micron Technology Inc. Series - Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 8Mb (1M x 8) Memory Interface SPI Clock Frequency 75MHz Write Cycle Time - Word, Page 15ms, 5ms Access Time - Voltage - Supply 2.3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 8-VDFN Exposed Pad Supplier Device Package 8-VFQFPN (6x5) |
Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Dual Port, Asynchronous Memory Size 8Kb (1K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 35ns Access Time 35ns Voltage - Supply 4.5V ~ 5.5V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Through Hole Package / Case 48-DIP (0.600", 15.24mm) Supplier Device Package 48-SIDE BRAZED |
