S29WS512R0SBHW200
For Reference Only
| Part Number | S29WS512R0SBHW200 |
| PNEDA Part # | S29WS512R0SBHW200 |
| Description | IC FLASH 512M PARALLEL 104MHZ |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,902 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 2 - May 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S29WS512R0SBHW200 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S29WS512R0SBHW200 |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
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S29WS512R0SBHW200 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | WS-R |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 512Mb (32M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 104MHz |
| Write Cycle Time - Word, Page | 60ns |
| Access Time | 80ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 84-VFBGA |
| Supplier Device Package | 84-FBGA (11.6x8) |
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Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Dual Port, Asynchronous Memory Size 18Mb (512K x 36) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 12ns Access Time 12ns Voltage - Supply 2.4V ~ 2.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 256-LBGA Supplier Device Package 256-CABGA (17x17) |
