S2M-E3/5BT
For Reference Only
| Part Number | S2M-E3/5BT |
| PNEDA Part # | S2M-E3-5BT |
| Description | DIODE GEN PURP 1KV 1.5A DO214 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 669,516 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 23 - Jun 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S2M-E3/5BT Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | S2M-E3/5BT |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
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Notes
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- Orders cannot be canceled after shipping the packages.
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S2M-E3/5BT Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000V |
| Current - Average Rectified (Io) | 1.5A |
| Voltage - Forward (Vf) (Max) @ If | 1.15V @ 1.5A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2µs |
| Current - Reverse Leakage @ Vr | 1µA @ 1000V |
| Capacitance @ Vr, F | 16pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AA, SMB |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 6A (DC) Voltage - Forward (Vf) (Max) @ If 2.3V @ 6A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 50µA @ 600V Capacitance @ Vr, F 130pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package PG-TO220-2-2 Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 125V Current - Average Rectified (Io) 200mA Voltage - Forward (Vf) (Max) @ If 1V @ 100mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1nA @ 60V Capacitance @ Vr, F 3pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case SOD-80 Variant Supplier Device Package SOD-80 QuadroMELF Operating Temperature - Junction -65°C ~ 175°C |
