S34MS01G200BHI000
For Reference Only
| Part Number | S34MS01G200BHI000 |
| PNEDA Part # | S34MS01G200BHI000_33 |
| Description | IC FLASH 1G PARALLEL 63BGA |
| Manufacturer | Cypress Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 2,430 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 2 - May 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S34MS01G200BHI000 Resources
| Brand | Cypress Semiconductor |
| ECAD Module |
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| Mfr. Part Number | S34MS01G200BHI000 |
| Category | Semiconductors › Memory ICs › Memory |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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S34MS01G200BHI000 Specifications
| Manufacturer | Cypress Semiconductor Corp |
| Series | MS-2 |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 1Gb (128M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 45ns |
| Access Time | 45ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 63-VFBGA |
| Supplier Device Package | 63-BGA (11x9) |
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Manufacturer Cypress Semiconductor Corp Series NoBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 36Mb (2M x 18) Memory Interface Parallel Clock Frequency 250MHz Write Cycle Time - Word, Page - Access Time 2.5ns Voltage - Supply 2.375V ~ 2.625V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 165-LBGA Supplier Device Package 165-FBGA (15x17) |
