S3DHE3/9AT
For Reference Only
| Part Number | S3DHE3/9AT |
| PNEDA Part # | S3DHE3-9AT |
| Description | DIODE GEN PURP 200V 3A DO214AB |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 7,218 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 1 - May 6 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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S3DHE3/9AT Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | S3DHE3/9AT |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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S3DHE3/9AT Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 1.15V @ 2.5A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2.5µs |
| Current - Reverse Leakage @ Vr | 10µA @ 200V |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AB, SMC |
| Supplier Device Package | DO-214AB (SMC) |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 500V Current - Average Rectified (Io) 16A Voltage - Forward (Vf) (Max) @ If 1.7V @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 10µA @ 500V Capacitance @ Vr, F 60pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB (D²PAK) Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 1.15V @ 3A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 2.8µs Current - Reverse Leakage @ Vr 5µA @ 200V Capacitance @ Vr, F 26pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-214AB, SMC Supplier Device Package DO-214AB (SMC) Operating Temperature - Junction -55°C ~ 150°C |
