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S3MHE3_A/I

S3MHE3_A/I

For Reference Only

Part Number S3MHE3_A/I
PNEDA Part # S3MHE3_A-I
Description DIODE GEN PURP 1KV 3A DO214AB
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 30,576
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

S3MHE3_A/I Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberS3MHE3_A/I
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
S3MHE3_A/I, S3MHE3_A/I Datasheet (Total Pages: 4, Size: 84.81 KB)
PDFS3GHE3/9AT Datasheet Cover
S3GHE3/9AT Datasheet Page 2 S3GHE3/9AT Datasheet Page 3 S3GHE3/9AT Datasheet Page 4

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S3MHE3_A/I Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)1000V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If1.15V @ 2.5A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)2.5µs
Current - Reverse Leakage @ Vr10µA @ 1000V
Capacitance @ Vr, F60pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AB, SMC
Supplier Device PackageDO-214AB (SMC)
Operating Temperature - Junction-55°C ~ 150°C

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