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SCT20N120

SCT20N120

For Reference Only

Part Number SCT20N120
PNEDA Part # SCT20N120
Description MOSFET N-CH 1200V 20A HIP247
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 1,633
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SCT20N120 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSCT20N120
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SCT20N120, SCT20N120 Datasheet (Total Pages: 13, Size: 493.81 KB)
PDFSCT20N120 Datasheet Cover
SCT20N120 Datasheet Page 2 SCT20N120 Datasheet Page 3 SCT20N120 Datasheet Page 4 SCT20N120 Datasheet Page 5 SCT20N120 Datasheet Page 6 SCT20N120 Datasheet Page 7 SCT20N120 Datasheet Page 8 SCT20N120 Datasheet Page 9 SCT20N120 Datasheet Page 10 SCT20N120 Datasheet Page 11

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SCT20N120 Specifications

ManufacturerSTMicroelectronics
Series-
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs290mOhm @ 10A, 20V
Vgs(th) (Max) @ Id3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs45nC @ 20V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds650pF @ 400V
FET Feature-
Power Dissipation (Max)175W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3

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