SCT2H12NYTB
For Reference Only
| Part Number | SCT2H12NYTB |
| PNEDA Part # | SCT2H12NYTB |
| Description | 1700V 1.2 OHM 4A SIC FET |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 16,914 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 26 - Jul 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SCT2H12NYTB Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
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| Mfr. Part Number | SCT2H12NYTB |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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SCT2H12NYTB Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 410µA |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 18V |
| Vgs (Max) | +22V, -6V |
| Input Capacitance (Ciss) (Max) @ Vds | 184pF @ 800V |
| FET Feature | - |
| Power Dissipation (Max) | 44W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-268 |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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