SCT2H12NZGC11
For Reference Only
| Part Number | SCT2H12NZGC11 |
| PNEDA Part # | SCT2H12NZGC11 |
| Description | MOSFET N-CH 1700V 3.7A |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 13,728 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 8 - May 13 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SCT2H12NZGC11 Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
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| Mfr. Part Number | SCT2H12NZGC11 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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SCT2H12NZGC11 Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 900µA |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 18V |
| Vgs (Max) | +22V, -6V |
| Input Capacitance (Ciss) (Max) @ Vds | 184pF @ 800V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PFM |
| Package / Case | TO-3PFM, SC-93-3 |
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Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 650mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.7Ohm @ 650mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 27pF @ 30V FET Feature - Power Dissipation (Max) 1.4W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3L Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Renesas Electronics America Series - FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
