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SCTH90N65G2V-7

SCTH90N65G2V-7

For Reference Only

Part Number SCTH90N65G2V-7
PNEDA Part # SCTH90N65G2V-7
Description SILICON CARBIDE POWER MOSFET 650
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,022
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SCTH90N65G2V-7 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSCTH90N65G2V-7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SCTH90N65G2V-7, SCTH90N65G2V-7 Datasheet (Total Pages: 14, Size: 612.15 KB)
PDFSCTH90N65G2V-7 Datasheet Cover
SCTH90N65G2V-7 Datasheet Page 2 SCTH90N65G2V-7 Datasheet Page 3 SCTH90N65G2V-7 Datasheet Page 4 SCTH90N65G2V-7 Datasheet Page 5 SCTH90N65G2V-7 Datasheet Page 6 SCTH90N65G2V-7 Datasheet Page 7 SCTH90N65G2V-7 Datasheet Page 8 SCTH90N65G2V-7 Datasheet Page 9 SCTH90N65G2V-7 Datasheet Page 10 SCTH90N65G2V-7 Datasheet Page 11

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SCTH90N65G2V-7 Specifications

ManufacturerSTMicroelectronics
Series-
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs157nC @ 18V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds3300pF @ 400V
FET Feature-
Power Dissipation (Max)330W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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