SCTW90N65G2V
For Reference Only
| Part Number | SCTW90N65G2V |
| PNEDA Part # | SCTW90N65G2V |
| Description | SILICON CARBIDE POWER MOSFET 650 |
| Manufacturer | STMicroelectronics |
| Unit Price | Request a Quote |
| In Stock | 6,498 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 19 - Jun 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SCTW90N65G2V Resources
| Brand | STMicroelectronics |
| ECAD Module |
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| Mfr. Part Number | SCTW90N65G2V |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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SCTW90N65G2V Specifications
| Manufacturer | STMicroelectronics |
| Series | - |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 50A, 18V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 157nC @ 18V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 390W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | HiP247™ |
| Package / Case | TO-247-3 |
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