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SD1057-01H

SD1057-01H

For Reference Only

Part Number SD1057-01H
PNEDA Part # SD1057-01H
Description RF POWER TRANSISTOR
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 8,118
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SD1057-01H Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberSD1057-01H
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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SD1057-01H Specifications

ManufacturerMicrosemi Corporation
Series-
Transistor Type-
Voltage - Collector Emitter Breakdown (Max)-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

2GHz

Noise Figure (dB Typ @ f)

-

Gain

9.5dB

Power - Max

5W

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 100mA, 5V

Current - Collector (Ic) (Max)

250mA

Operating Temperature

-

Mounting Type

Chassis Mount

Package / Case

55BT

Supplier Device Package

55BT

2SC5012-A

CEL

Manufacturer

CEL

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

10V

Frequency - Transition

9GHz

Noise Figure (dB Typ @ f)

1.2dB @ 1GHz

Gain

15dB

Power - Max

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 20mA, 8V

Current - Collector (Ic) (Max)

65mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-82A, SOT-343

Supplier Device Package

-

MS2092H

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Transistor Type

-

Voltage - Collector Emitter Breakdown (Max)

-

Frequency - Transition

-

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

-

DC Current Gain (hFE) (Min) @ Ic, Vce

-

Current - Collector (Ic) (Max)

-

Operating Temperature

-

Mounting Type

-

Package / Case

-

Supplier Device Package

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AT-32032-TR1G

Broadcom

Manufacturer

Broadcom Limited

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

5.5V

Frequency - Transition

-

Noise Figure (dB Typ @ f)

1dB ~ 1.3dB @ 900MHz

Gain

13.5dB ~ 15dB

Power - Max

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 2.7V

Current - Collector (Ic) (Max)

40mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SC-70-3

BFU520YX

NXP

Manufacturer

NXP USA Inc.

Series

Automotive, AEC-Q101

Transistor Type

2 NPN (Dual)

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

10GHz

Noise Figure (dB Typ @ f)

0.65dB @ 900MHz

Gain

19dB

Power - Max

450mW

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 5mA, 8V

Current - Collector (Ic) (Max)

30mA

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SOT-363

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