SE10DB-M3/I
For Reference Only
| Part Number | SE10DB-M3/I |
| PNEDA Part # | SE10DB-M3-I |
| Description | DIODE GEN PURP 100V 3A TO263AC |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 3,294 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 18 - Jun 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SE10DB-M3/I Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | SE10DB-M3/I |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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SE10DB-M3/I Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | Automotive, AEC-Q101 |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 1.15V @ 10A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 3µs |
| Current - Reverse Leakage @ Vr | 15µA @ 100V |
| Capacitance @ Vr, F | 67pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab) Variant |
| Supplier Device Package | TO-263AC (SMPD) |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer Torex Semiconductor Ltd Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 660mV @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 55ns Current - Reverse Leakage @ Vr 300µA @ 60V Capacitance @ Vr, F 195pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case DO-214AC, SMA Supplier Device Package SMA Operating Temperature - Junction 125°C (Max) |
Manufacturer Cree/Wolfspeed Series Z-Rec® Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 30A (DC) Voltage - Forward (Vf) (Max) @ If 1.8V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 50µA @ 600V Capacitance @ Vr, F 480pF @ 0V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220-2 Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 200mA Voltage - Forward (Vf) (Max) @ If 1.25V @ 200mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) 50ns Current - Reverse Leakage @ Vr 100nA @ 100V Capacitance @ Vr, F 5pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case SOD-123 Supplier Device Package SOD-123 Operating Temperature - Junction -65°C ~ 150°C |
