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SE10FJ-M3/H

SE10FJ-M3/H

For Reference Only

Part Number SE10FJ-M3/H
PNEDA Part # SE10FJ-M3-H
Description DIODE GEN PURP 600V 1A DO219AB
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 7,704
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SE10FJ-M3/H Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberSE10FJ-M3/H
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
SE10FJ-M3/H, SE10FJ-M3/H Datasheet (Total Pages: 6, Size: 128.99 KB)
PDFSE10FJHM3/H Datasheet Cover
SE10FJHM3/H Datasheet Page 2 SE10FJHM3/H Datasheet Page 3 SE10FJHM3/H Datasheet Page 4 SE10FJHM3/H Datasheet Page 5 SE10FJHM3/H Datasheet Page 6

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SE10FJ-M3/H Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.05V @ 1A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)780ns
Current - Reverse Leakage @ Vr5µA @ 600V
Capacitance @ Vr, F7.5pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-219AB
Supplier Device PackageDO-219AB (SMF)
Operating Temperature - Junction-55°C ~ 175°C

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